Low frequency noise investigation of 2–3 μm GaSb-based laser diodes

Justinas Glemža,Sandra Pralgauskaitė,Vilius Palenskis,Jonas Matukas

Solid-State Electronics（2017）

引用 7|浏览4

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摘要

•Low frequency noise of GaSb-based LD is investigated at forward and reverse biases.•Influence of facet passivation to noise characteristics was determined.•The largest contribution to noise characteristics is of difference in LD structure.

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关键词

Cross-correlation coefficient,Electrical noise,Fluctuation,GaSb,Mid-infrared laser diode,Optical noise

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