A 300mm foundry HRSOI technology with variable silicon thickness for integrated FEM applications

Rui Tze Toh,Shyam Parthasarathy, Tao Sun,Shaoqiang Zhang,Raj Verma Purakh, Chao Song Zhu,Venkata Sudheer Nune,Jen Shuang Wong,Madabusi Govindarajan,Yong Koo Yoo,Kok Wai Chew,Diing Shenp Ang

2016 IEEE International Electron Devices Meeting (IEDM)（2016）

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摘要

A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and f _T >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.

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关键词

HRSOI technology,system-on-chip RF front-end module,integrated FEM applications,extended drain power MOSFET,EDNMOS,high performance switch device

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