Engineering the electronic defect bands at the Si 1−x Ge x /IL interface: Approaching the intrinsic carrier transport in compressively-strained Si 1−x Ge x pFETs

ChoongHyun Lee,Richard G. Southwick,Hemanth Jagannathan

international electron devices meeting（2016）

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摘要

We identify the existence of electronic defect levels close to the Si 1−x Ge x band edges associated with the Ge surface concentration at the Si 1−x Ge x /IL interface (0 1−x Ge x /IL interface, through control of the Ge surface concentration, high channel carrier mobility over wide charge densities in compressively-strained Si 1−x Ge x channel pFETs is demonstrated. For the first time, the dominant scattering mechanisms for hole mobility in Si 1−x Ge x channel pFETs are investigated to understand the carrier transport physics.

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关键词

device threshold voltage,channel mobility,carrier scattering centers,surface concentration,electronic defect levels,compressively-strained pFET,intrinsic carrier transport,electronic defect bands

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