Formation Of I-2-Type Basal-Plane Stacking Faults In In0.25ga0.75n Multiple Quantum Wells Grown On A (10<(1)Overbar>1) Semipolar Gan Template

In this work, I-2-type basal-plane stacking faults (BSFs) were observed in In0.25Ga0.75N multiple quantum wells (MQWs) grown on a (10 (1) over bar 1) semipolar GaN template by high-resolution transmission electron microscopy. The structure and formation mechanisms of the I-2-type BSFs at the GaN-InGaN interface were investigated in detail. The formation of the I-2-type BSFs contributes to lattice mismatch accommodation within the InGaN QWs. Their density varies in different regions of the sample due to the inhomogeneous distribution of the In content in the InGaN layer. The relationship between the In content in the InxGa1-xN layer and the I-2-type BSFs is discussed. Published by AIP Publishing.