Fully Cmos-Compatible Integrated Distributed Feedback Laser With 250 Degrees C Fabricated Al2o3:Er3+ Gain Medium

conference on lasers and electro optics(2016)

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摘要
We demonstrate a DFB laser with a record low temperature (250 degrees C) fabrication process of low-loss (< 0.1 dB/cm) amorphous Al2O3:Er3+ gain medium by utilizing the substrate bias, facilitating laser integration in a fully CMOS- compatible platform.
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