Comparison and Interpretation of Admittance Spectroscopy and Deep Level Transient Spectroscopy from Co-Evaporated and Solution-Deposited Cu2ZnSn(Sx, Se1−x)4 Solar Cells
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)（2016）
Key words
admittance spectroscopy,deep level transient spectroscopy,coevaporation,solution-deposited solar cells,earth-abundant semiconductor,thin-film photovoltaic devices,minority carrier lifetimes,open circuit voltage,deep level defects,kesterites,DLTS,CZTSSe absorber layers,widely-distributed activation energy,energy barriers,minority traps,Cu2ZnSn(SxSe1-x)4
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