Studies Of Silicon Nanowires With Different Parameters - By Pecvd

One-dimensional nanostructures such as nanowires have a wide range of applications. Silicon is the best competitive material for the carbon nanotubes (CNTs). Carbon and silicon have some similar and peculiar properties. Silicon nanowires (SiNWs) were synthesized using plasma enhanced chemical vapor deposition (PECVD) on p-Si (111) wafer. Gold is used as a catalyst for the growth of the SiNWs. Based on our fundamental understanding of vapor-liquid-solid (VLS) nanowire growth mechanism, different levels of growth controls have been achieved. Gold catalyst deposited and annealed at different temperatures with different thicknesses (450 degrees C, 500 degrees C and 550 degrees C, 600 degrees C, 650 degrees C for 4 min and 8 min and 3 nm, 5 nm, 30 nm Au thickness). SiNW grown by PECVD with different carrier gases varies with flow rate. We observed the different dimensions of Si nanowires by FESEM and optimized the growth parameters to get the vertical aligned and singular Si nanowires. Optical phonon of the Si nanowires and crystallinity nature were identified by Raman spectral studies.