Cycling-Induced Charge Trapping/Detrapping in Flash Memories—Part I: Experimental Evidence
IEEE Transactions on Electron Devices(2016)
摘要
By using our 16-nm NAND Flash technology as a test vehicle, in this paper, we summarize all the experimental evidence that we have gathered so far on the phenomenology of cycling-induced charge trapping/detrapping in Flash memories. In particular, results from experiments conceived to explore the dependence of charge detrapping on cell memory state reveal that the phenomenon involves more than the...
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关键词
Flash memories,Temperature measurement,Electron traps,Semiconductor device reliability,Transient analysis,Semiconductor device modeling
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