Selective GeOx -scavenging from interfacial layer on Si1−x Gex channel for high mobility Si/Si1−x Gex CMOS application
2016 IEEE Symposium on VLSI Technology(2016)
摘要
We demonstrate a technique for selective GeO
x
-scavenging which creates a GeO
x
-free IL on Si
1-x
Ge
x
substrates. This process reduces N
it
by >60% to 2e11 and increases high-field mobility at N
inv
=1e13 cm
-2
by ~1.3× in Si
0.6
Ge
0.4
pFETs with sub-nm EOT.
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关键词
interfacial layer,CMOS,pFET,EOT,Si1-xGex,GeOx,Si-Si1-xGex
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