Advanced A-Vmco Resistive Switching Memory Through Inner Interface Engineering with Wide (>102) On/off Window, Tunable Μa-Range Switching Current and Excellent Variability
2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2016）
Key words
vacancy modulated conductive oxide,a-VMCO resistive switching memory,on-off window,tunable switching current,nonfilamentary resistive switching memory cell,BEOL-compatible process,device-to-device variability,barrier resistance modulation,current reduction,inner-interface engineered devices,reset switching currents,vertical stack scaling,size 40 nm,Si-TiO2
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