Binding energy of the donor impurities in GaAs–Ga 1− x Al x As quantum well wires with Morse potential in the presence of electric and magnetic fields*

The behavior of a donor in the GaAs-Ga1-xAlxAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters (D-e, r(e), and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.