Characterization Of High-Photocurrent And High-Speed Inp-Based Uni-Traveling-Carrier Photodiodes At 1.55-Mu M Wavelength

We demonstrate a semi-analytical parameter extraction method to characterize high-speed and high-photocurrent InP-based unitraveling- carrier photodiodes with dipole-doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz. (C) 2016 Wiley Periodicals, Inc.