Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature

IEEE Transactions on Nuclear Science(2016)

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摘要
In the framework of the European I-Smart project, optimal 4H-SiC based diode geometries were developed for high temperature neutron detection. Irradiation tests were conducted with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron yield of $4.04 \times {10^{10}} - 5.25 \times {10^{10}}\;\hbox{n/s}$ at Neutron Laboratory of the Technical University of Dr...
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关键词
Temperature measurement,Neutrons,Detectors,Temperature sensors,Silicon carbide,Histograms,Electron tubes
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