Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

We present the use of ferntosecond laser ablation for the removal of monolayer grapheme from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to he 0.132 dB/mu m.