A robust wafer thinning down to 2.6-μm for bumpless interconnects and DRAM WOW applications
2015 IEEE International Electron Devices Meeting (IEDM)(2015)
摘要
An ultra-thinning down to 2.6-μm with and without Cu contamination at 10
13
atoms/cm
2
using 300-mm wafer proven by 2Gb DRAM has been developed for the first time. The impact of Si thickness and Cu contamination at wafer backside for DRAM yield including retention characteristics is described. Thickness uniformity for all wafers after thinning was below 2-μm within 300-mm wafer. A degradation in terms of retention characteristics occurred after thinning down to 2.6-μm while no degradation after thinning down to 5.6-μm for both wafer and package level test were found.
更多查看译文
关键词
wafer thinning,bumpless interconnects,DRAM WOW applications,Cu contamination,DRAM,retention characteristics,thickness uniformity,package level test,size 300 mm,Cu,Si
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要