Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

Raheleh Hedayati,Luigia Lanni,Ana Rusu,Carl-Mikael Zetterling

IEEE Electron Device Letters（2016）

引用 30|浏览44

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摘要

Three fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H-SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 °C to 500 °C. The three BGVRs are functional and exhibit 46 ppm/°C, 131 ppm/°C, and 120 ppm/°C output voltage variations from 25 °C up to 500 °C. This letter shows that SiC bipolar BGVRs are capable of providing ...

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关键词

Photonic band gap,Temperature measurement,Temperature distribution,Silicon carbide,Transistors,Current measurement,Integrated circuit modeling

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