Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs

This paper investigates the influence of the short-channel effects (SCEs) on the static noise margin (SNM) of 6T (6 transistors) SRAM composed of 2D MOSFETs. An analytical all-region I-V model for short-channel complementary 2D MOSFETs has been developed, and a simulation model has been built to calculate SNM with the consideration of SCEs and velocity saturation. The results show that there exists an optimal value of channel length ( L opt ) where SNM reaches a maximum, and L opt is approximately three times the scale length. In the region where L > L opt , SNM increases slightly as L decreases because of velocity saturation, while in the region where L < L opt , SNM decreases rapidly as L decreases as the SCEs are dominant. The worst case of SNM reduction due to the threshold voltage ( V T ) fluctuation is investigated, and the maximum V T tolerance is studied as a function of L . In an SRAM with a scale length of 5 nm, as L decreases from 15 nm to 5 nm, SNM decreases from 155 mV to 98 mV, and the maximum V T tolerance decreases from 126 mV to 105 mV.