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Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Journal of Materials Engineering and Performance(2019)

Cited 5|Views80
Key words
high surface concentrations,plasma doping without any external bias (PDWOEB),point defects,room-temperature (RT) diffusion,ultra-shallow doping depths
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