Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer
IEEE Transactions on Electron Devices(2019)
摘要
The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (V
O
), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In
0.50
Ga
0.34
Zn
0.16
O channel by ALD (36.6 cm
$^{\textsf {2}}/\text{V}\cdot \text{s}$
) compared to that of the sputtered In
0.48
Ga
0.38
Zn
0.14
O transistor (20.1 cm
$^{\textsf {2}}/\text{V}\cdot \text{s}$
); the
${I}_{\text {ON/OFF}}$
ratios for both were ~10
7
. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like V
O
density.
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关键词
Sputtering,Zinc,Logic gates,Chemicals,Thin film transistors,Performance evaluation
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