Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
IEEE Transactions on Electron Devices（2019）
Key words
3-D NAND flash,cell current/threshold voltage instability,gate-all-around (GAA),grain boundary trap (GBT),nonvolatile memory,polycrystalline silicon channel,program verify (PV),transient,trapping/detrapping
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