Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration

Koichi Motoyama
Koichi Motoyama
R. Shaviv
R. Shaviv
M. Stolfi
M. Stolfi
R. Vinnakota
R. Vinnakota
G. How
G. How

international interconnect technology conference, 2018.

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Abstract:

Integration of thermal atomic layer deposition (ALD) TaN films modified by physical vapor deposition post-treatment (PPT) and in-situ plasma treatment (IPT) was investigated on 36nm pitch BEOL structures. The PPT and IPT processes produce an interface more suitable for liner (Co/Ru) and physical vapor deposition (PVD) of Cu seed. This res...More

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