Temperature dependence of the on-state voltage drop in field-stop IGBTs
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2018)
摘要
Insulated Gate Bipolar Transistor (IGBT) is the reference design for power semiconductor switches in the range of the medium-high power applications. Different designs were proposed along the development story of this device, but the actual trend is leaded by the Field-Stop IGBT (FS-IGBT) concept. One of the main advantages of this design is the great accuracy in defining the Emitter injection efficiency of the vertical PNP. However a careful design of the Collector side has to be carried out to avoid unwanted effects such as a negative temperature coefficient for the Von of the device. In this work we present the two main cause of the aforementioned effect, with a detailed analysis of the effect of the arising of a Schottky Barrier (SB) at the Collector contact for low doping concentrations.
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关键词
Field-Stop IGBT,Schottky Barrier,Voltage drop temperature coefficient,TCAD simulations
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