Self-heating measurement methodologies and their assessment on bulk FinFET devices
2017 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW)(2017)
摘要
This paper describes three different measurement methodologies for the electrical characterization of FinFET self-heating at wafer-level. The different sensor types were designed to use the threshold voltage (V-T) of an adjacent FET, the forward bias (V-D) of an adjacent pn-junction or the gate resistance (R-G) of the device itself. We report that self-heating is underestimated by 35% when sensed at a neighboring device. We also confirm that heat from local and surrounding sources are additive.
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关键词
self-heating,reliability,heat sensor
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