InGaP/AlGaInP Quantum Well Discrete Mode Laser Diode Emitting at 689 nm

Richard Phelan,Michael R. Gleeson,Diarmuid Byrne,John O'Carroll,Philip Long, Lina Maigyte,Robert Lennox,Kevin Carney,C. Herbert, Jim Somers,Brian Kelly

IEEE Photonics Technology Letters（2018）

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摘要

A discrete-mode laser diode, fabricated in the In0.6Ga0.4P/AlGaInP multiple quantum well system, emitting a single mode at $\lambda =689$ nm is reported. The laser has an ex-facet output power >10 mW at 30 °C and operates mode hop free in the temperature range 0 °C to 50 °C.

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关键词

Laser modes,Diode lasers,Semiconductor lasers,Optical device fabrication,Waveguide lasers,Stimulated emission,Optical waveguides

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