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Design of a 250 Kw, 1200 V SiC MOSFET-Based Three-Phase Inverter by Considering a Subsystem Level Design Optimization Approach

2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)(2017)

Cited 31|Views84
Key words
Wide-bandgap,SiC MOSFET,Multi-Physics Design,Double-Pulse Testing,DC Laminated Bus,Three-Phase Inverter
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