Effects of high-energy electrons in advanced NAND flash memories

Marta Bagatin,Simone Gerardin,A. Paccagnella,Alessandra Costantino,V. Ferlet-Cavrois,A. Virtanen,H. Kettunen, Pierre Wang

2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2016）

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摘要

We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.

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关键词

Flash,Radiation Effects,Single Event Upset,Neutrons,Alpha Particles

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