Diamond Schottky diodes operating at 473 K

EPE JOURNAL(2017)

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摘要
In this paper, we present current-voltage characteristics of vertical and pseudo-vertical Diamond Schottky diodes operating up to 473 K. The functionality rate is greater than 75% for each samples. For vertical diodes, current density at 473 K reaches 488 A/cm(2), while it is greater than 1000 A/cm(2) for pseudo-vertical diodes. Under reverse bias, the leakage current is less than 10(-7) A/cm(2) at 50 V for all functional diodes. However, the high barrier height and high non-ideality factor observed are probably caused by high charges at the Diamond/Schottky contact interface. This article emphasizes the high reproducibility of the characteristics and the functionality rate at 473 K.
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关键词
Diamond,diode,Schottky,high temperature,simulation,characterization
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