Microstructure modulation for resistance reduction in copper interconnects

international interconnect technology conference, pp. 1-3, 2017.

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Abstract:

Microstructure variation with post-patterning dielectric aspect ratio (AR) and post-plating annealing temperature has been investigated in Cu narrow wires. As compared to the conventional annealing at 100 ◦C for a feature AR of 2.6, both elevated temperature anneals and reduced AR structures modulated Cu microstructure, which then resulte...More

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