Analysis of the temperature dependence of the thermal conductivity of insulating single crystal oxides

The temperature dependence of the thermal conductivity of 27 different single crystal oxides is reported from approximate to 20 K to 350 K. These crystals have been selected among the most common substrates for growing epitaxial thin- film oxides, spanning over a range of lattice parameters from approximate to 3.7 angstrom to approximate to 12.5 angstrom. Different contributions to the phonon relaxation time are discussed on the basis of the Debye model. This work provides a database for the selection of appropriate substrates for thin-film growth according to their desired thermal properties, for applications in which heat management is important. (C) 2016 Author(s).