Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature
2016 13th China International Forum on Solid State Lighting International Forum on Wide Bandgap Semiconductors China (SSLChina IFWS)（2016）
关键词
noncatalytic CVD graphene layers,high temperature effect,heteroepitaxial GaN films,conventional two-step growth process,low temperature GaN buffer layer,noncatalytic sapphire substrate,chemical vapor deposition,Raman spectroscopy,X-ray photoelectron spectroscopy,XPS,atomic force microscopy,AFM,nucleation,near-band-edge emission,ultraviolet photosensor,buffer layer,temperature 1200 degC,GaN
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