Particle detectors based on 4H-SiC epitaxial layer and their properties

We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles. A Schottky contact of Ni/Au of 1.4 mm in diameter was used. Current-voltage characteristics of the detector were measured and a current density lower than 25 nAcm ^-2 was observed at room temperature. A ²²⁶ Ra used as a source of a-particles within the energy range between 4.6 MeV and 7.7 MeVfor detector testing. The energy resolution below 48 keV was measured for 7.7 MeV a-particles. The detector was irradiated by ¹³² Xe ²³⁺ ions with energy of 165 MeV and fluencies of 5×10 ⁹ cm ² and 1.5× 10 ¹⁰ cm ² . Spectra of α-particles were measured after irradiation and significant degradation of energy resolution was observed.