Lateral growth of GaN by liquid phase electroepitaxy using mesa-shaped substrate

GaN microchannel epitaxy (MCE) was performed using a mesa-shaped substrate and liquid phase electroepitaxy. A flat and wide MCE layer was successfully obtained with a rectangular shape, which is formed by +/- c-planes on both the top and bottom surfaces. MCE growth proceeded mainly in the lateral direction by the formation of these planes. Cathodoluminescence measurements showed that the laterally grown layers were almost free of dislocations, and that the dislocations in the mesa areas were confined by the vertical sides of the mesas. In the case of inclined sides, the dislocations would be expected to bend and spread into the laterally grown areas. (C) 2016 The Japan Society of Applied Physics