Ruthenium interconnect resistivity and reliability at 48 nm pitch

international interconnect technology conference, pp. 31-33, 2016.

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Abstract:

48 nm pitch dual damascene interconnects are patterned and filled with ruthenium. Ru interconnect has comparable high yield for line and via macros. Electrical results show minimal impact for via resistance and around 2 times higher line resistance. Resistivity and cross section area of Ru interconnects are measured by temperature coeffic...More

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