Determining the base resistance of InP HBTs: An evaluation of methods and structures

Solid-State Electronics(2016)

引用 6|浏览20
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摘要
•The base resistance of InP DHBTs from different technologies is determined.•Single transistor terminal data based and test-structure methods are evaluated.•Error quantification and analysis is performed using compact model generated data.•Method improvements are suggested where possible.•Single transistor terminal data based methods are unreliable even under ideal circumstances.
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关键词
InP HBT,Base resistance,Compact modeling,Parameter extraction
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