14.3 A 43pJ/Cycle Non-Volatile Microcontroller with 4.7μs Shutdown/Wake-up Integrating 2.3-bit/Cell Resistive RAM and Resilience Techniques

2019 IEEE International Solid- State Circuits Conference - (ISSCC)(2019)

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摘要
Non-volatility is emerging as an essential on-chip memory characteristic across a wide range of application domains, from edge nodes for the Internet of Things (IoT) to large computing clusters. On-chip non-volatile memory (NVM) is critical for low-energy operation, real-time responses, privacy and security, operation in unpredictable environments, and fault-tolerance [1]. Existing on-chip NVMs (e.g., Flash, FRAM, EEPROM) suffer from high read/write energy/latency, density, and integration challenges [1]. For example, an ideal IoT edge system would employ fine-grained temporal power gating (i.e., shutdown) between active modes. However, existing on-chip Flash can have long latencies (> 23 ms latency for erase followed by write), while inter-sample arrival times can be short (e.g., 2ms in [2]).
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