13.4 A 512gb 3-Bit/cell 3D 6Th-Generation V-NAND Flash Memory with 82mb/s Write Throughput and 1.2gb/s Interface
Dongku Kang,Min-su Kim,Suchang Jeon, Won-Chang Jung,Jooyong Park,Gyo Soo Choo,Dong-Kyo Shim,Anil Kavala,Seungbum Kim,Kyung-Min Kang,Jiyoung Lee,K. Ko,H. Park,ByungJun Min,Changyeon Yu,Sewon Yun,Nahyun Kim,Y. Jung,S. Seo,Sunghoon Kim,M. Lee, Joonhong Park,James C. Kim,Young San Cha,Kwangwon Kim,Youngmin Jo,Hyun-Jin Kim,Youngdon Choi,J. Byun,Ji-hyun Park,Kiwon Kim,T. Kwon,Young-Sun Min,Chiweon Yoon,Youngcho Kim,Dong-Hun Kwak,Eungsuk Lee,Wook-Ghee Hahn,Kisung Kim,Kyungmin Kim,Euisang Yoon,Wontae Kim,I. Lee,Seunghyun Moon,Jeong-Don Ihm,D. Byeon,Ki-Whan Song,Sang-Jun Hwang,K. Kyung IEEE International Solid-State Circuits Conference（2019）
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