Physically Based Compact Mobility Model for Organic Thin-Film Transistor

T. K. Maiti,Lei Chen,H. Zenitani,Hidenori Miyamoto,M. Miura-Mattausch,Hans Jürgen Mattausch

IEEE Transactions on Electron Devices（2016）

引用 11|浏览3

暂无评分

摘要

A physically based compact mobility model for organic thin-film transistors (OTFTs) with an analysis of bias-dependent Fermi-energy (EF) movement in the bandgap (Eg) is presented. Mobility in the localized and extended energy states predicts the drain-current behavior in the weak and strong accumulation operations of OTFTs, respectively. A hopping mobility model as a function of the surface potent...

查看译文

关键词

Organic thin film transistors,Energy states,Mathematical model,Logic gates,Semiconductor device modeling,Charge carrier density

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要