Hot Carrier Aging and Its Variation under Use-Bias: Kinetics, Prediction, Impact on Vdd and Sram

M. Duan,J. F. Zhang,A. Manut,Z. Ji,W. Zhang,A. Asenov,L. Gerrer,D. Reid,H. Razaidi,D. Vigar,V. Chandra,R. Aitken,B. Kaczer,G. Groeseneken

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2015）

引用 17|浏览84

关键词

hot carrier aging,SRAM,CMOS scale,stress bias,use-bias,HCA-induced variation,RTN,source measure-unit,SMU,erroneous power exponent,static random access memory,kinetics

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