Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
international electron devices meeting, 2015.
Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMn O barrier, with integrity proven by vertical-trench triangular-voltage-sweep and barrier-oxidation tests. tCoSFB scheme enab...More
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