Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes

2015 IEEE International Electron Devices Meeting (IEDM)（2015）

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摘要

Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMn _x O _y barrier, with integrity proven by vertical-trench triangular-voltage-sweep and barrier-oxidation tests. tCoSFB scheme enables 32% and 45% lower line and via resistance, respectively at 10 nm node dimensions, while achieving superior EM performance to competitive TaN/Co and TaN/Ru-based barriers.

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关键词

through-cobalt self forming barrier,copper/ULK BEOL,advanced technology node,tCoSFB metallization scheme,gap-fill capability,doped-seedlayer diffusion,CVD-cobalt wetting layer,vertical-trench triangular-voltage-sweep,barrier-oxidation test,via resistance,size 10 nm,Cu,Co,Mn,TaMnxOy

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