Electrode effects on the current conduction mechanisms in TaO x -based RRAM
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)（2015）
摘要
To understand the current conduction mechanism of TaO x RRAM with different top electrodes, we investigated the field and temperature dependence of the charge transport. High resistance state shows a transition from Ohmic to Schottky emission then to Poole-Frenkel emission as the electric field increases. Different top electrode materials impact the Schottky and trap barrier heights which affect device performance.
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关键词
resistive random access memory,nonvolatile memory
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