Transient 3-D Tcad Simulation Of Multiple Snapback Event In Mixed-Mode Test For Mutual Relation Between Protection Devices
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2015)
摘要
Mutual ESD behavior dependency between multiple devices under Transmission Line Pulse stress was investigated using transient 3-D TCAD simulation. Interestingly, the transient response of drain voltage has multiple snapback profiles in the mixed-mode test. When one of the devices in the mixed-mode test is turned on, the current waveform of the other adjacent devices shows snapback profile. This mutual relation between protection devices affects the ESD robustness. If there is a big imbalance of individual ESD characteristics between the devices under the mixed-mode test, the lattice temperature hot-spot and failure may occurs in the device even though the robustness of the other connected device is lower than that of the device in the single-device test.
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关键词
multiple-snapback event,mixed-mode simulation,ESD robustness,TLP test
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