High precision mapping of single-pixel Silicon Drift Detector for applications in astrophysics and advanced light source

A Silicon Drift Detector with 3×3 mm2 sensitive area was designed by INFN of Trieste and built by FBK-Trento. It represents a single-pixel precursor of a monolithic matrix of multipixel Silicon Drift Detectors and, at the same time, a model of one cell Fluorescence Detector System (XAFS) for SESAME. The point-by-point mapping tests of the detector were carried out in the X-ray facilities at INAF-IAPS in Rome, equipped with a motorized two-axis micrometric positioning system. High precision characterization of this detector was done with a radioactive 55Fe source and a collimated Ti X-ray tube equipped with a Bragg crystal monocromator.