Two-Step Read Scheme in One-Selector and One-RRAM Crossbar-Based Neural Network for Improved Inference Robustness

Introducing a threshold switching selector in a resistive random access memory (RRAM) is essential for implementing a crossbar array that accurately accelerates neuromorphic computations. But, at an expense, a read voltage (Vread) to be used for inference tasks is inevitably boosted. Therefore, this brief shows the effect of the enlarged Vread on the stability of conductance states of the RRAM rel...