Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs

IEEE Transactions on Electron Devices(2019)

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摘要
A compact model for tunnel diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio frequency (RF) performance of a TDBC SOI MOSFET. The TDBC SOI MOSFETs are successfully fabricated and are used to measure important transistor electrical parameters. The investigation results reveal that TD...
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关键词
MOSFET circuits,Integrated circuit modeling,Semiconductor device modeling,Radio frequency,MOSFET,Analytical models,Mathematical model
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