0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha,Niklas Wadefalk,Per-Åke Nilsson,Joel Schleeh,Giuseppe Moschetti,Arsalan Pourkabirian,Silvia Tuzi,Jan Grahn

IEEE Transactions on Microwave Theory and Techniques（2018）

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摘要

We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3-14 and 16-28 GHz. The 0.3-14 GHz three-stage LNA exhibited a gain of 41.6 ± 1.4 dB and an average noise temperature of 3.5 K with a minimum noise temperature of 2.2 K at 6 GHz wh...

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Logic gates,HEMTs,MODFETs,Cryogenics,Indium phosphide,III-V semiconductor materials

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