Ti Film Thickness Influences on the Back Channel Etched Amorphous InGaZnO4 Thin Film Transistors
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)(2018)
摘要
Back channel etched (BCE) amorphous InGaZnO
4
(a-IGZO) thin film transistors are fabricated, in which Ti thin film is employed as a protective layer for a-IGZO. The optimal Ti thickness is found to be 4-5 nm, and a-IGZO will be well protected and excellent transfer curves can be obtained after O
2
plasma and annealing treatment. Besides, by the introduction of the Ti layer, the devices obtain better stress stability.
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关键词
a-IGZO thin film transistors,back-channel etched,titanium,film thickness
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