Optimization and Scaling of Ge-Pocket TFET
IEEE Transactions on Electron Devices（2018）
摘要
TFETs are promising candidates for future low-power logic applications because of their potential for outperforming conventional MOSFETs under reduced supply voltage (VDD). Among all material systems currently being explored, group IV semiconductor SiGe holds the most potential due to its very large scale integration (VLSI) compatibility, mature synthesis techniques, and tunable bandgap, making it...
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关键词
TFETs,Tunneling,Silicon germanium,Silicon,Semiconductor process modeling,Logic gates,Doping
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