Heteroepitaxial 3C-SiC on Si (1 0 0) with flow-modulated carbonization process conditions
Journal of Crystal Growth（2019）
摘要
•Innovation use of flow-modulated carbonization process for 3C-SiC heteroepitaxy.•Improved crystal quality with FWHM of 3C-SiC(2 0 0) reduced from 0.754° to 0.282°.•Reduced voids at SiC/Si(1 0 0) interface through suppression of Si out-diffusion.
更多查看译文
关键词
A3. Chemical vapor deposition processes,B2. Semiconducting materials,A3. Heteroepitaxial 3C-SiC films,A3. Flow-modulated carbonization process
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要