Sulfur passivation of 3C-SiC thin film

Jianing Su,Ying Yang,Xuhui Zhang,Hao Wang,Longxiang Zhu

Journal of Crystal Growth（2019）

引用 4|浏览7

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摘要

•Effective passivation was formed after passivation by passivation solutions.•SiS and CS bonds were the most abundant after passivation by neutral solution.•PL peak was the highest after passivation by neutral solution.

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关键词

B1. 3C-SiC,A1. Sulfur passivation,A1. XPS,A1. PL spectra

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