First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

IEEE Electron Device Letters(2018)

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摘要
This letter represents the first direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge atoms among palladium germanide alloy formation indirectly induce the abnormal out-diffusion of mass palladium atoms into Ge. Consequently, palladium germanide alloy on both n-type and p-type Ge form ohmic-li...
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关键词
Junctions,Substrates,Handheld computers,Atomic layer deposition,Palladium,Atomic measurements
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